一区二区三区毛片无码_精品久久久一区二区三区_亚洲一级无码在线视频_犇影視亚洲不卡中文字幕

product

功率MOS

產(chǎn)品展示MOSFET功率MOS

NCE12P09S

NCE12P09S

Description The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -12V,ID = -9A RDS(ON) < 22m? @ VGS=-2.5V RDS(ON) < 18m? @ VGS=-4.5V ● Advanced trench MOSFET process techno

Description The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. 

General Features 

● VDS = -12V,ID = -9A RDS(ON) < 22m? @ VGS=-2.5V 

RDS(ON) < 18m? @ VGS=-4.5V 

● Advanced trench MOSFET process technology 

● Ultra low on-resistance with low gate charge Application

 ● PWM applications 

● Load switch 

● Battery charge in cellular handset


沒有了

NCE2333Y